2007-03-30 bfp520f 1 1 2 4 3 npn silicon rf transistor* ? for highest gain low noise amplifier at 1.8 ghz and 2 ma / 2 v outstanding g ms = 23 db noise figure f = 0.95 db ? for oscillators up to 15 ghz ? transition frequency f t = 45 ghz ? gold metallisation for high reliability ? sieget ? 45 - line ? pb-free (rohs compliant) package 1) ? qualified according aec q101 * short term description esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bfp520f aps 1=b 2=e 3=c 4=e - - tsfp-4 maximum ratings parameter symbol value unit collector-emitter voltage t a > 0 c t a 0 c v ceo 2.5 2.4 v collector-emitter voltage v ces 10 collector-base voltage v cbo 10 emitter-base voltage v ebo 1 collector current i c 40 ma base current i b 4 total power dissipation 2) t s 107 c p tot 100 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 1 pb-containing package may be available upon special request 2 t s is measured on the collector lead at the soldering point to pcb
2007-03-30 bfp520f 2 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 430 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 2.5 3 3.5 v collector-emitter cutoff current v ce = 10 v, v be = 0 i ces - - 10 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 200 ma emitter-base cutoff current v eb = 1 v, i c = 0 i ebo - - 35 a dc current gain i c = 20 ma, v ce = 2 v, pulse measured h fe 70 110 170 - 1 for calculation of r thja please refer to application note thermal resistance
2007-03-30 bfp520f 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 30 ma, v ce = 2 v, f = 2 ghz f t 32 45 - ghz collector-base capacitance v cb = 2 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.07 0.14 pf collector emitter capacitance v ce = 2 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.25 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.31 - noise figure i c = 2 ma, v ce = 2 v, z s = z sopt , f = 1.8 ghz f - 0.95 - db power gain, maximum stable 1) i c = 20 ma, v ce = 2 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 22.5 - db insertion power gain v ce = 2 v, i c = 20 ma, f = 1.8 ghz, z s = z l = 50 ? | s 21 | 2 - 20.5 - third order intercept point at output v ce = 2 v, i c = 20 ma, f = 1.8 ghz, z s = z sopt, z l = z lopt ip 3 - 23.5 - dbm 1db compression point i c = 20 ma, v ce = 2 v, z s = z sopt, z l = z lopt , f = 1.8 ghz p -1db - 10.5 - 1 g ms = |s 21 / s 12 |
2007-03-30 bfp520f 4 spice parameter (gummel-poon model, berkley-spice 2g.6 syntax): transistor chip data: is = 15 aa vaf = 25 v ne = 2- var = 2v nc = 2- rbm = 7.5 ? cje = 235 ff tf = 1.7 ps itf = 0.7 a vjc = 0.661 v tr = 50 ns mjs = 0.333 - xti = 0.35 - bf = 235 - ikf = 0.4 a br = 1.5 - ikr = 0.01 a rb = 11 ? re = 0.6 - vje = 0.958 v xtf = 10 - ptf = 50 deg mjc = 0.236 - cjs = 0 ff xtb = -0.25 - fc = 0.5 nf = 1- ise = 25 fa nr = 1- isc = 20 fa irb = -a rc = 7.6 ? mje = 0.335 - vtf = 5v cjc = 93 ff xcjc = 1- vjs = 0.75 v eg = 1.11 ev tnom 298 k all parameters are ready to use, no scalling is necessary. extracted on behalf of infineon technologies ag by: institut fr mobil- und satellitentechnik (imst) package equivalent circuit: l bo = 0.22 nh l eo = 0.28 nh l co = 0.22 nh l bi = 0.42 nh l ei = 0.26 nh l ci = 0.35 nh k bo-eo = 0.1 - k bo-co = 0.01 - k eo-co = 0.11 - k ci-ei = -0.05 - k bi-ci = -0.08 - k bi-ei = 0.2 - c be = 34 ff c bc = 2 ff c ce =33 ff r lbi = 0.11 ? r lei = 0.13 ? valid up to 6ghz the tsfp-4 package has two emitter leads. to avoid high complexity fo the package equivalent circuit, both leads are combined in one electrical connection. r lxi are series resistors for the inductances l xi and k xa-by are the coupling coefficients between the inductances l ax and l yb . the referencepin for the couple ports are b, e, c, b`, e`, c for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineontechnologies cd-rom or see internet: http//www.infineon.com/silicondiscretes
2007-03-30 bfp520f 5 package tsfp-4 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel bfp420f type code pin 1 0.35 0.45 0.9 0.5 0.5 4 0.2 1.55 0.7 1.4 8 pin 1 0.05 0.2 0.05 1.4 12 10? max. 0.05 0.8 1.2 0.05 0.04 0.55 0.05 0.2 0.05 0.15 0.05 0.2 0.5 0.05 0.5 0.05 43 manufacturer
2007-03-30 bfp520f 6 edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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